shaanxi qunli electric co., ltd add.:no. 1 qunli road,baoji city,shaanxi,china contact:jiandong lei tel.:+86-917-6293906 fax:+86-917-6297928 sxqlljd@hotmail.com 245 features: 1. using epitaxy planar technology structure. high working freque ncy. metallic packaging. 2. small volume, light weight, easy installation. 3. use for high frequency oscilla tion, high frequency small signal amplification, low power source adjustment circuit. 4. quality class: gs, g. implementation of standards: qzj840611 technical data: (ta = 25c ) specifications parameter name symbols unit a b c d test condition total dissipation p tot mw 500 ta=25 c max. collector current i cm ma 100 junction temperature t jm c 175 storage temperature t stg c -55~+175 c-b breakdown voltage v (br)cbo v 40 60 40 60 c-e breakdown voltage v (br)ceo v 30 45 30 45 i c =0.1ma e-b breakdown voltage v (br)ebo v 4 i e =0.1ma collector- emitter saturation voltage drop v ce(sat) v 0.5 base- emitter saturation voltage drop v be(sat) v 1.0 i c =50ma i b =5ma c-b leakage current i cbo ua 0.1 v cb =10v c-e leakage current i ceo ua 0.2 v ce =10v e-b leakage current i ebo ua 0.1 v eb =1.5v dc current gain h fe 25~270 v ce =10v, i c =30ma transition frequency f t mhz 500 500 700 700 v ce =10v, i c =30ma f=100 mhz h fe colored: color orange yellow green blue purple gray h fe 25~40 40~55 55~80 80~120 120~180 180~270 outline and dimensions: 3DG122 npn silicon hi g h fre q uenc y middle power transistor www..net
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